{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9659963","patent":{"patent_number":"US-9659963","title":"Contact formation to 3D monolithic stacked FinFETs","assignee":null,"inventors":[],"filing_date":"2015-06-29T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A first gate structure straddles one end of a staircase fin stack that contains a first semiconductor material fin, an insulator fin, and a second semiconductor material fin, a second gate structure straddles a portion of the staircase fin stack, a third gate structure straddles another end of the staircase fin stack, and a fourth gate structure straddles a portion of only the first semiconductor fin. A first contact structure is between the first and second gate structures, a second contact structure is between the second and third gate structures, and a third contact structure is between the third and fourth gate structures. The first contact structure has a contact metal that contacts the first and second semiconductor material fins. The second contact structure has a contact metal that contacts only the second semiconductor material fin, and the third contact structure has a contact metal that contacts only the first semiconductor fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact formation to 3D monolithic stacked FinFETs","description":"A first gate structure straddles one end of a staircase fin stack that contains a first semiconductor material fin, an insulator fin, and a second semiconductor material fin, a second gate structure s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9659963","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9659963","citation_suggestion":"Patentable. \"Contact formation to 3D monolithic stacked FinFETs\" (US-9659963). https://patentable.app/patents/US-9659963","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9659963","json":"https://patentable.app/api/llm-context/US-9659963","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:01:24.043Z"}