{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660020","patent":{"patent_number":"US-9660020","title":"Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same","assignee":null,"inventors":[],"filing_date":"2014-05-23T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"Integrated circuits with improved laterally diffused metal oxide semiconductor (LDMOS) structures, and methods of fabricating the same, are provided. An exemplary LDMOS integrated circuit includes a p-type semiconductor substrate, an n-type epitaxial layer disposed over and in contact with the p-type semiconductor substrate, and a p-type implant layer disposed within the n-type epitaxial layer, wherein the p-type implant layer is not in contact with the p-type semiconductor substrate. It further includes an n-type reduced surface field region disposed over and in contact with the p-type implant layer, a p-type body well disposed on a lateral side of the p-type implant layer and the n-type reduced surface field region, and a shallow trench isolation (STI) structure disposed within the n-type reduced surface field region. Still further, it includes a gate structure disposed partially over the p-type body well, partially over the n-type surface field region, and partially over the STI structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same","description":"Integrated circuits with improved laterally diffused metal oxide semiconductor (LDMOS) structures, and methods of fabricating the same, are provided. An exemplary LDMOS integrated circuit includes a p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660020","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660020","citation_suggestion":"Patentable. \"Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same\" (US-9660020). https://patentable.app/patents/US-9660020","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660020","json":"https://patentable.app/api/llm-context/US-9660020","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:33:50.982Z"}