{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660035","patent":{"patent_number":"US-9660035","title":"Semiconductor device including superlattice SiGe/Si fin structure","assignee":null,"inventors":[],"filing_date":"2014-01-29T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":11,"abstract":"A semiconductor device includes a semiconductor-on-insulator substrate having an insulator layer, and at least one silicon germanium (SiGe) fin having a superlattice structure. The SiGe fin is formed on an upper surface of the insulator layer. A gate stack is formed on an upper surface of the at least one silicon germanium fin. The gate stack includes first and second opposing spacers defining a gate length therebetween. First and second epitaxial source/drain structures are formed on the insulator layer. The first and second epitaxial source/drain structures extend beneath the spacer to define a silicon germanium gate channel beneath the gate stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including superlattice SiGe/Si fin structure","description":"A semiconductor device includes a semiconductor-on-insulator substrate having an insulator layer, and at least one silicon germanium (SiGe) fin having a superlattice structure. The SiGe fin is formed ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660035","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660035","citation_suggestion":"Patentable. \"Semiconductor device including superlattice SiGe/Si fin structure\" (US-9660035). https://patentable.app/patents/US-9660035","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660035","json":"https://patentable.app/api/llm-context/US-9660035","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:22:23.778Z"}