{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660047","patent":{"patent_number":"US-9660047","title":"Method for forming semiconductor components having self-aligned trench contacts","assignee":null,"inventors":[],"filing_date":"2015-06-11T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for producing a semiconductor component includes providing a semiconductor body having a first semiconductor material extending to a first surface and at least one trench, the at least one trench extending from the first surface into the semiconductor body, a first insulation layer being arranged in the at least one trench. The method further includes forming a second insulation layer on the first surface having a recess that overlaps in a projection onto the first surface with the at least one trench, forming a mask region in the recess, etching the second insulation layer selectively to the mask region, depositing a third insulation layer over the first surface, and etching the third insulation layer so that a semiconductor mesa of the semiconductor body arranged next to the at least one trench is exposed at the first surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor components having self-aligned trench contacts","description":"A method for producing a semiconductor component includes providing a semiconductor body having a first semiconductor material extending to a first surface and at least one trench, the at least one tr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660047","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660047","citation_suggestion":"Patentable. \"Method for forming semiconductor components having self-aligned trench contacts\" (US-9660047). https://patentable.app/patents/US-9660047","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660047","json":"https://patentable.app/api/llm-context/US-9660047","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:47:34.809Z"}