{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660049","patent":{"patent_number":"US-9660049","title":"Semiconductor transistor device with dopant profile","assignee":null,"inventors":[],"filing_date":"2015-03-30T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A transistor and a method for forming the transistor are provided. The method includes performing at least one implantation operation in the transistor channel area, then forming a silicon carbide/silicon composite film over the implanted area prior to introducing further dopant impurities. A halo implantation operation with a low tilt angle is used to form areas of high dopant concentration at edges of the transistor channel to alleviate short channel effects. The transistor structure includes a reduced dopant impurity concentration at the substrate interface with the gate dielectric and a peak concentration about 10-50 nm below the surface. The dopant profile has high dopant impurity concentration areas at opposed ends of the transistor channel."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor transistor device with dopant profile","description":"A transistor and a method for forming the transistor are provided. The method includes performing at least one implantation operation in the transistor channel area, then forming a silicon carbide/sil","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660049","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660049","citation_suggestion":"Patentable. \"Semiconductor transistor device with dopant profile\" (US-9660049). https://patentable.app/patents/US-9660049","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660049","json":"https://patentable.app/api/llm-context/US-9660049","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:42:46.040Z"}