{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660051","patent":{"patent_number":"US-9660051","title":"Method for producing semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-01-10T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for producing a semiconductor device includes forming a first insulating film around a fin-shaped semiconductor layer and forming a pillar-shaped semiconductor layer and forming a second diffusion layer in an upper portion of the fin-shaped semiconductor layer and a lower portion of the pillar-shaped semiconductor layer. A metal-semiconductor compound is formed on the second diffusion layer. A first metal is deposited to form a gate electrode and a gate line. Second and third metal films are deposited to form a first contact in which the second metal film surrounds a sidewall of an upper portion of the pillar-shaped semiconductor layer, and a second contact connects an upper portion of the first contact and an upper portion of the pillar-shaped semiconductor layer. A third contact is formed on the gate line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing semiconductor device","description":"A method for producing a semiconductor device includes forming a first insulating film around a fin-shaped semiconductor layer and forming a pillar-shaped semiconductor layer and forming a second diff","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660051","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660051","citation_suggestion":"Patentable. \"Method for producing semiconductor device\" (US-9660051). https://patentable.app/patents/US-9660051","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660051","json":"https://patentable.app/api/llm-context/US-9660051","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:43:49.076Z"}