{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660054","patent":{"patent_number":"US-9660054","title":"Tunneling field effect transistor (TFET) with ultra shallow pockets formed by asymmetric ion implantation and method of making same","assignee":null,"inventors":[],"filing_date":"2016-01-18T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"An embodiment integrated circuit device and a method of making the same. The embodiment integrated circuit includes a substrate supporting a source with a first doping type and a drain with a second doping type on opposing sides of a channel region in the substrate, and a pocket disposed in the channel region, the pocket having the second doping type and spaced apart from the drain between about 2 nm and about 15 nm. In an embodiment, the pocket has a depth of between about 1 nanometer to about 30 nanometers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tunneling field effect transistor (TFET) with ultra shallow pockets formed by asymmetric ion implantation and method of making same","description":"An embodiment integrated circuit device and a method of making the same. The embodiment integrated circuit includes a substrate supporting a source with a first doping type and a drain with a second d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660054","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660054","citation_suggestion":"Patentable. \"Tunneling field effect transistor (TFET) with ultra shallow pockets formed by asymmetric ion implantation and method of making same\" (US-9660054). https://patentable.app/patents/US-9660054","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660054","json":"https://patentable.app/api/llm-context/US-9660054","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:33:31.112Z"}