{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660055","patent":{"patent_number":"US-9660055","title":"Method of manufacturing a semiconductor device with lateral FET cells and field plates","assignee":null,"inventors":[],"filing_date":"2016-03-01T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method of manufacturing a semiconductor device includes providing dielectric stripe structures extending from a first surface into a semiconductor substrate between semiconductor fins. A first mask is provided that covers a first area including first stripe sections of the dielectric stripe structures and first fin sections of the semiconductor fins. The first mask exposes a second area including second stripe and second fin sections. A channel/body zone is formed in the second fin sections by introducing impurities, wherein the first mask is used as an implant mask. Using an etch mask that is based on the first mask, recess grooves are formed at least in the second stripe sections."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device with lateral FET cells and field plates","description":"A method of manufacturing a semiconductor device includes providing dielectric stripe structures extending from a first surface into a semiconductor substrate between semiconductor fins. A first mask ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660055","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660055","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device with lateral FET cells and field plates\" (US-9660055). https://patentable.app/patents/US-9660055","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660055","json":"https://patentable.app/api/llm-context/US-9660055","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:31:45.620Z"}