{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660056","patent":{"patent_number":"US-9660056","title":"3D UTB transistor using 2D-material channels","assignee":null,"inventors":[],"filing_date":"2016-01-07T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device and a method of manufacture are provided. A substrate has a dielectric layer formed thereon. A three-dimensional feature, such as a trench or a fin, is formed in the dielectric layer. A two-dimensional layer, such as a layer (or multilayer) of graphene, transition metal dichalcogenides (TMDs), or boron nitride (BN), is formed over sidewalls of the feature. The two-dimensional layer may also extend along horizontal surfaces, such as along a bottom of the trench or along horizontal surfaces of the dielectric layer extending away from the three-dimensional feature. A gate dielectric layer is formed over the two-dimensional layer and a gate electrode is formed over the gate dielectric layer. Source/drain contacts are electrically coupled to the two-dimensional layer on opposing sides of the gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D UTB transistor using 2D-material channels","description":"A semiconductor device and a method of manufacture are provided. A substrate has a dielectric layer formed thereon. A three-dimensional feature, such as a trench or a fin, is formed in the dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660056","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660056","citation_suggestion":"Patentable. \"3D UTB transistor using 2D-material channels\" (US-9660056). https://patentable.app/patents/US-9660056","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660056","json":"https://patentable.app/api/llm-context/US-9660056","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:33:22.145Z"}