{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660058","patent":{"patent_number":"US-9660058","title":"Method of FinFET formation","assignee":null,"inventors":[],"filing_date":"2015-02-02T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a fin for a FinFET device includes providing a semiconductor substrate, forming a patterned silicon germanium layer on the semiconductor substrate, epitaxially growing a silicon layer on a top surface and sidewalls of the patterned silicon germanium layer, forming a sacrificial layer covering the patterned silicon germanium layer, and removing the sacrificial layer and a portion of the silicon layer disposed on the top surface of the patterned silicon germanium layer until a top surface of the sacrificial layer is co-planar with the top surface of the patterned silicon germanium layer. The method further includes removing the patterned silicon germanium layer and removing the sacrificial layer to form the fin. The epitaxially formed fin does not have the issues of line width roughness and edge roughness to improve the performance of the FinFET device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of FinFET formation","description":"A method of fabricating a fin for a FinFET device includes providing a semiconductor substrate, forming a patterned silicon germanium layer on the semiconductor substrate, epitaxially growing a silico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660058","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660058","citation_suggestion":"Patentable. \"Method of FinFET formation\" (US-9660058). https://patentable.app/patents/US-9660058","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660058","json":"https://patentable.app/api/llm-context/US-9660058","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:44:52.902Z"}