{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660063","patent":{"patent_number":"US-9660063","title":"Semiconductor structure having sets of III-V compound layers and method of forming the same","assignee":null,"inventors":[],"filing_date":"2015-08-12T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a substrate; and a graded III-V layer over the substrate. The semiconductor structure further includes a p-doped gallium nitride (GaN) layer over the graded III-V layer. The semiconductor structure further includes one or more sets of GaN layers over the p-doped GaN layer. Each set of the one or more sets of GaN layers includes a lower GaN layer, wherein the lower GaN layer is undoped, unintentionally doped having N-type doping, or N-type doped. Each set of the one or more sets of GaN layers includes an upper GaN layer on the lower GaN layer, wherein the upper GaN layer is P-type doped. The semiconductor structure includes a second GaN layer over the one or more sets of GaN layers, the second GaN layer being either undoped or unintentionally doped having the N-type doping. The semiconductor structure includes an active layer over the second GaN layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure having sets of III-V compound layers and method of forming the same","description":"A semiconductor structure includes a substrate; and a graded III-V layer over the substrate. The semiconductor structure further includes a p-doped gallium nitride (GaN) layer over the graded III-V la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660063","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660063","citation_suggestion":"Patentable. \"Semiconductor structure having sets of III-V compound layers and method of forming the same\" (US-9660063). https://patentable.app/patents/US-9660063","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660063","json":"https://patentable.app/api/llm-context/US-9660063","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:15:00.831Z"}