{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660068","patent":{"patent_number":"US-9660068","title":"Nitride semiconductor","assignee":null,"inventors":[],"filing_date":"2014-09-01T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"According to this GaN-based HFET, resistivity ρ of a semi-insulating film forming a gate insulating film is 3.9×109Ωcm. The value of this resistivity ρ is a value derived when the current density is 6.25×10−4 (A/cm2). By inclusion of the gate insulating film by a semi-insulating film having a resistivity ρ=3.9×109Ωcm, a withstand voltage of 1000 V can be obtained. Meanwhile, the withstand voltage abruptly drops as the resistivity of the gate insulating film exceeds 1 ×1011Ωcm, and the gate leak current increases when the resistivity of the gate insulating film drops below 1 ×107Ωcm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor","description":"According to this GaN-based HFET, resistivity ρ of a semi-insulating film forming a gate insulating film is 3.9×109Ωcm. The value of this resistivity ρ is a value derived when the current density is 6","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660068","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660068","citation_suggestion":"Patentable. \"Nitride semiconductor\" (US-9660068). https://patentable.app/patents/US-9660068","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660068","json":"https://patentable.app/api/llm-context/US-9660068","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:47:22.737Z"}