{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660073","patent":{"patent_number":"US-9660073","title":"High-voltage semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2015-12-17T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"A high-voltage semiconductor device is provided. The device includes a semiconductor substrate including a well region of a first conductivity type and an isolation structure in the well region. First and second regions are respectively defined on both sides of the isolation structure. First and second gate structures are respectively disposed on the first and second regions. First and second implant regions of a second conductivity type that is different from the first conductivity type are respectively in the first and second regions and adjacent to the isolation structure. A counter implant region is in the well region under the isolation structure and laterally extends under the first and second implant regions. The counter implant region has the first conductivity type and has a doping concentration that is greater than that of the well region. A method for fabricating the high-voltage semiconductor device is also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-voltage semiconductor device and method for manufacturing the same","description":"A high-voltage semiconductor device is provided. The device includes a semiconductor substrate including a well region of a first conductivity type and an isolation structure in the well region. First","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660073","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660073","citation_suggestion":"Patentable. \"High-voltage semiconductor device and method for manufacturing the same\" (US-9660073). https://patentable.app/patents/US-9660073","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660073","json":"https://patentable.app/api/llm-context/US-9660073","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:31:03.956Z"}