{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660074","patent":{"patent_number":"US-9660074","title":"Methods and apparatus for LDMOS devices with cascaded RESURF implants and double buffers","assignee":null,"inventors":[],"filing_date":"2015-07-24T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"LDMOS devices are disclosed. An LDMOS device includes at least one drift region disposed in a portion of a semiconductor substrate; at least one isolation structure at a surface of the semiconductor substrate; a D-well region positioned adjacent a portion of the at least one drift region, and an intersection of the drift region and the D-well region forming a junction between first and second conductivity types; a gate structure disposed over the semiconductor substrate; a source contact region disposed on the surface of the D-well region; a drain contact region disposed adjacent the isolation structure; and a double buffer region comprising a first buried layer lying beneath the D-well region and the drift region and doped to the second conductivity type and a second high voltage deep diffusion layer lying beneath the first buried layer and doped to the first conductivity type. Methods are disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods and apparatus for LDMOS devices with cascaded RESURF implants and double buffers","description":"LDMOS devices are disclosed. An LDMOS device includes at least one drift region disposed in a portion of a semiconductor substrate; at least one isolation structure at a surface of the semiconductor s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660074","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660074","citation_suggestion":"Patentable. \"Methods and apparatus for LDMOS devices with cascaded RESURF implants and double buffers\" (US-9660074). https://patentable.app/patents/US-9660074","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660074","json":"https://patentable.app/api/llm-context/US-9660074","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:31:11.645Z"}