{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660075","patent":{"patent_number":"US-9660075","title":"Integrated circuits with dual silicide contacts and methods for fabricating same","assignee":null,"inventors":[],"filing_date":"2016-02-24T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"Integrated circuits having silicide contacts with reduced contact resistance and methods for fabricating integrated circuits having silicide contacts with reduced contact resistance are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate with fin structures having source/drain regions in PFET areas and in NFET areas. The method includes selectively forming a contact resistance modulation material on the source/drain regions in the PFET areas. Further, the method includes depositing a band-edge workfunction metal overlying the source/drain regions in the PFET areas and in the NFET areas."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuits with dual silicide contacts and methods for fabricating same","description":"Integrated circuits having silicide contacts with reduced contact resistance and methods for fabricating integrated circuits having silicide contacts with reduced contact resistance are provided. In a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660075","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660075","citation_suggestion":"Patentable. \"Integrated circuits with dual silicide contacts and methods for fabricating same\" (US-9660075). https://patentable.app/patents/US-9660075","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660075","json":"https://patentable.app/api/llm-context/US-9660075","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:14:51.081Z"}