{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660082","patent":{"patent_number":"US-9660082","title":"Integrated circuit transistor structure with high germanium concentration SiGe stressor","assignee":null,"inventors":[],"filing_date":"2013-12-11T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"An integrated circuit transistor structure includes a semiconductor substrate, a first SiGe layer in at least one of a source area or a drain area on the semiconductor substrate, and a channel between the source area and the drain area. The first SiGe layer has a Ge concentration of 50 percent or more."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuit transistor structure with high germanium concentration SiGe stressor","description":"An integrated circuit transistor structure includes a semiconductor substrate, a first SiGe layer in at least one of a source area or a drain area on the semiconductor substrate, and a channel between","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660082","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660082","citation_suggestion":"Patentable. \"Integrated circuit transistor structure with high germanium concentration SiGe stressor\" (US-9660082). https://patentable.app/patents/US-9660082","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660082","json":"https://patentable.app/api/llm-context/US-9660082","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:23:21.119Z"}