{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660093","patent":{"patent_number":"US-9660093","title":"Transistor with multilayer film including oxide semiconductor layer and oxide layer","assignee":null,"inventors":[],"filing_date":"2013-10-07T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["G02F","H01L"],"num_claims":24,"abstract":"Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor with multilayer film including oxide semiconductor layer and oxide layer","description":"Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor de","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660093","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660093","citation_suggestion":"Patentable. \"Transistor with multilayer film including oxide semiconductor layer and oxide layer\" (US-9660093). https://patentable.app/patents/US-9660093","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660093","json":"https://patentable.app/api/llm-context/US-9660093","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:29:47.927Z"}