{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660100","patent":{"patent_number":"US-9660100","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-02-01T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":24,"abstract":"A semiconductor device is formed in such a manner that a first insulator, a first oxide semiconductor, and a first conductor are formed; the first conductor is processed to form a second conductor; the first oxide semiconductor is processed to form a second oxide semiconductor; a second insulator is formed over the second conductor; a third insulator is formed over the second insulator; a fourth insulator is formed over the third insulator; the fourth insulator, the third insulator, the second insulator, and the second conductor are selectively processed to partly expose the second oxide semiconductor; a fifth insulator is formed over the second oxide semiconductor and the fourth insulator; and a third conductor is formed over the fifth insulator and then chemical mechanical polishing treatment is performed to expose a top surface of the fourth insulator."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"A semiconductor device is formed in such a manner that a first insulator, a first oxide semiconductor, and a first conductor are formed; the first conductor is processed to form a second conductor; th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660100","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660100","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-9660100). https://patentable.app/patents/US-9660100","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660100","json":"https://patentable.app/api/llm-context/US-9660100","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:38:40.453Z"}