{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9660141","patent":{"patent_number":"US-9660141","title":"Pattern wafer for LEDs, epitaxial wafer for LEDs and method of manufacturing the epitaxial wafer for LEDs","assignee":null,"inventors":[],"filing_date":"2014-05-28T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (20), a rotation shift angle Θ meets 0°<Θ≦(180/n)° in which Θ is the rotation shift angle of an arrangement axis A of the uneven structure A (20) with respect to a crystal axis direction in the main surface, and a top of the convex-portion of the uneven structure A (20) is a corner portion with a radius of curvature exceeding “0”. A first semiconductor layer (30), light emitting semiconductor layer (40) and second semiconductor layer (50) are layered on the uneven structure A (20) to constitute an epitaxial wafer (100) for LEDs. It is possible to provide the pattern wafer for LEDs and epitaxial wafer for LEDs with cracks and internal quantum efficiency IQE improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Pattern wafer for LEDs, epitaxial wafer for LEDs and method of manufacturing the epitaxial wafer for LEDs","description":"A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9660141","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9660141","citation_suggestion":"Patentable. \"Pattern wafer for LEDs, epitaxial wafer for LEDs and method of manufacturing the epitaxial wafer for LEDs\" (US-9660141). https://patentable.app/patents/US-9660141","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9660141","json":"https://patentable.app/api/llm-context/US-9660141","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:08:57.556Z"}