{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9661707","patent":{"patent_number":"US-9661707","title":"Method for manufacturing a semiconductor device using tilted ion implantation processes, semiconductor device and integrated circuit","assignee":null,"inventors":[],"filing_date":"2016-04-26T00:00:00.000Z","publication_date":"2017-05-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"A semiconductor device includes first and second field effect transistors (FETs) formed in a semiconductor substrate having a first main surface. The first FET includes first source and drain contact grooves, each running in a first direction parallel to the first main surface, each formed in the first main surface. First source regions are electrically connected to a conductive material in the first source contact groove. First drain regions are electrically connected to a conductive material in the first drain contact groove. The second FET includes second source and drain contact grooves, each running in a second direction parallel to the first main surface, each formed in the first main surface. Second source regions are electrically connected to a conductive material in the second source contact groove, and second drain regions are electrically connected to a conductive material in the second drain contact groove."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor device using tilted ion implantation processes, semiconductor device and integrated circuit","description":"A semiconductor device includes first and second field effect transistors (FETs) formed in a semiconductor substrate having a first main surface. The first FET includes first source and drain contact ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9661707","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9661707","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor device using tilted ion implantation processes, semiconductor device and integrated circuit\" (US-9661707). https://patentable.app/patents/US-9661707","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9661707","json":"https://patentable.app/api/llm-context/US-9661707","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:32:32.048Z"}