{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666215","patent":{"patent_number":"US-9666215","title":"Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy","assignee":null,"inventors":[],"filing_date":"2015-10-28T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["G11B","G11C","G11C","G11C"],"num_claims":15,"abstract":"A layered stack includes a first layer having a first spin polarization and a first magnetic moment, as well as a second layer (in contact with the first layer) having a second spin polarization a second magnetic moment. The first and second spin polarizations have the same orientation, but the first and second magnetic moments have orientations that partially cancel each other, thereby recommending the layered stack for applications in magnetic tunnel junctions, for example."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy","description":"A layered stack includes a first layer having a first spin polarization and a first magnetic moment, as well as a second layer (in contact with the first layer) having a second spin polarization a sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666215","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666215","citation_suggestion":"Patentable. \"Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy\" (US-9666215). https://patentable.app/patents/US-9666215","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666215","json":"https://patentable.app/api/llm-context/US-9666215","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:31:46.406Z"}