{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666256","patent":{"patent_number":"US-9666256","title":"Spin-orbit torque magnetic random access memory and method of writing the same","assignee":null,"inventors":[],"filing_date":"2016-12-09T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"An SOT-MRAM comprises a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer. The magnetic free layer includes a first metal film exhibiting ferromagnetic characteristics, and a second metal film for generating a spin-Hall effect. The first metal film has a thickness sufficient to allow the magnetic free layer, after being applied with a first external magnetic field which is subsequently removed, to have a magnetization ratio ranging from −0.9 to 0.9. The first metal film, upon being applied with a second external magnetic field and an electric pulse, has multiple magnetic domains when a current density resulting from the electric pulse is greater than a critical value."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Spin-orbit torque magnetic random access memory and method of writing the same","description":"An SOT-MRAM comprises a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer. The magnetic free layer includes a first metal film exhibiting ferromagnetic ch","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666256","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666256","citation_suggestion":"Patentable. \"Spin-orbit torque magnetic random access memory and method of writing the same\" (US-9666256). https://patentable.app/patents/US-9666256","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666256","json":"https://patentable.app/api/llm-context/US-9666256","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:03:52.609Z"}