{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666431","patent":{"patent_number":"US-9666431","title":"Large-scale patterning of germanium quantum dots by stress transfer","assignee":null,"inventors":[],"filing_date":"2016-05-23T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","B82Y"],"num_claims":21,"abstract":"Provided is a method for forming a two-dimensional array of semiconductor quantum confined structures. The method includes providing a layer that has first atoms and second atoms, the first atoms having a different size than the second atoms; providing an indenter template that includes at least one indenter structure extending from a surface of the indenter template; contacting the layer and the at least one indenter structure together with a pressure sufficient to generate an elastic deformation in the layer but without generating plastic deformation of the layer; annealing the layer. The contacting of the layer and the at least one indenter structure includes forming at least one quantum confined structure in the layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Large-scale patterning of germanium quantum dots by stress transfer","description":"Provided is a method for forming a two-dimensional array of semiconductor quantum confined structures. The method includes providing a layer that has first atoms and second atoms, the first atoms havi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666431","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666431","citation_suggestion":"Patentable. \"Large-scale patterning of germanium quantum dots by stress transfer\" (US-9666431). https://patentable.app/patents/US-9666431","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666431","json":"https://patentable.app/api/llm-context/US-9666431","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:44:51.086Z"}