{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666432","patent":{"patent_number":"US-9666432","title":"Method and apparatus for forming device quality gallium nitride layers on silicon substrates","assignee":null,"inventors":[],"filing_date":"2014-09-17T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":27,"abstract":"Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and apparatus for forming device quality gallium nitride layers on silicon substrates","description":"Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Dom","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666432","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666432","citation_suggestion":"Patentable. \"Method and apparatus for forming device quality gallium nitride layers on silicon substrates\" (US-9666432). https://patentable.app/patents/US-9666432","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666432","json":"https://patentable.app/api/llm-context/US-9666432","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:41:17.364Z"}