{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666437","patent":{"patent_number":"US-9666437","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-10-08T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device including a semiconductor chip having a front surface electrode and a rear surface electrode provided on a front surface and a rear surface, respectively, the method includes a front surface electrode layer forming step of forming a front surface electrode layer as the front surface electrode on a front surface of a semiconductor wafer forming the semiconductor chip; a thinning step of grinding a rear surface of the semiconductor wafer to reduce a thickness of the semiconductor wafer after the front surface electrode layer forming step; a plating step of forming an electrode plating film as the front surface electrode on a surface of the front surface electrode layer after the thinning step; and a rear surface electrode forming step of forming the rear surface electrode on the ground rear surface of the semiconductor wafer after the plating step."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"A method for manufacturing a semiconductor device including a semiconductor chip having a front surface electrode and a rear surface electrode provided on a front surface and a rear surface, respectiv","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666437","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666437","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-9666437). https://patentable.app/patents/US-9666437","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666437","json":"https://patentable.app/api/llm-context/US-9666437","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:15:06.880Z"}