{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666438","patent":{"patent_number":"US-9666438","title":"Semiconductor device and formation thereof","assignee":null,"inventors":[],"filing_date":"2016-07-07T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device and method of formation are provided. The semiconductor device comprises a metal plug in a first opening over a substrate. The metal plug has a contact bottom surface that is substantially convex. The substantially convex contact bottom surface has an increased contact area as compared to a contact bottom surface of a metal plug that is not substantially convex. The increased contact area decreases a resistance of the metal plug. The increased contact area requires a smaller deposition amount to form a metal plug seed layer of the metal plug than a semiconductor device with a smaller contact area. A smaller deposition amount reduces an overhang of the deposited metal plug seed layer material. A reduced overhang of the deposited metal plug seed layer material reduces pitting in a metal plug formed from the deposited metal plug seed layer material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and formation thereof","description":"A semiconductor device and method of formation are provided. The semiconductor device comprises a metal plug in a first opening over a substrate. The metal plug has a contact bottom surface that is su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666438","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666438","citation_suggestion":"Patentable. \"Semiconductor device and formation thereof\" (US-9666438). https://patentable.app/patents/US-9666438","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666438","json":"https://patentable.app/api/llm-context/US-9666438","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:41:16.858Z"}