{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666485","patent":{"patent_number":"US-9666485","title":"Method for forming semiconductor device having super-junction structures","assignee":null,"inventors":[],"filing_date":"2016-06-22T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A semiconductor device is disclosed. The device includes an epitaxial layer on a substrate, wherein the epitaxial layer includes first trenches and second trenches alternately arranged along a first direction. The epitaxial layer between the adjacent first and second trenches includes a first doping region and a second doping region, and the first doping region and the second doping region have different conductivity types. An interface is between the first doping region and the second doping region to form a super-junction structure. A gate structure is on the epitaxial layer. The epitaxial layer under the gate structure includes a channel extending along a second direction, and the first direction is perpendicular to the second direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor device having super-junction structures","description":"A semiconductor device is disclosed. The device includes an epitaxial layer on a substrate, wherein the epitaxial layer includes first trenches and second trenches alternately arranged along a first d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666485","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666485","citation_suggestion":"Patentable. \"Method for forming semiconductor device having super-junction structures\" (US-9666485). https://patentable.app/patents/US-9666485","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666485","json":"https://patentable.app/api/llm-context/US-9666485","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:04:00.150Z"}