{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666486","patent":{"patent_number":"US-9666486","title":"Contained punch through stopper for CMOS structures on a strain relaxed buffer substrate","assignee":null,"inventors":[],"filing_date":"2016-05-18T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure is provided in which the diffusion of arsenic is retarded. The structure includes a strain relaxed silicon germanium alloy buffer layer located on a surface of a silicon substrate. A boron-containing p-well region is located in a first region of a carbon doped silicon germanium alloy layer and on a first portion of the strain relaxed silicon germanium alloy buffer layer, and a phosphorus-containing n-well region is located in a second region of the carbon doped silicon germanium alloy layer and on a second portion of the strain relaxed silicon germanium alloy buffer layer. A tensily strained silicon material is located on a surface of the p-well region, and a compressively strained germanium-containing material is located on a surface of the n-well region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contained punch through stopper for CMOS structures on a strain relaxed buffer substrate","description":"A semiconductor structure is provided in which the diffusion of arsenic is retarded. The structure includes a strain relaxed silicon germanium alloy buffer layer located on a surface of a silicon subs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666486","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666486","citation_suggestion":"Patentable. \"Contained punch through stopper for CMOS structures on a strain relaxed buffer substrate\" (US-9666486). https://patentable.app/patents/US-9666486","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666486","json":"https://patentable.app/api/llm-context/US-9666486","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:56:11.152Z"}