{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666488","patent":{"patent_number":"US-9666488","title":"Pass-through contact using silicide","assignee":null,"inventors":[],"filing_date":"2016-04-11T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method of forming a silicide layer as a pass-through contact under a gate contact between p-epilayer and n-epilayer source/drains and the resulting device are provided. Embodiments include depositing a semiconductor layer over a substrate; forming a pFET gate on a p-side of the semiconductor layer and a nFET gate on a n-side of the semiconductor layer; forming a gate contact between the pFET gate and the nFET gate; forming raised source/drains on opposite sides of each of the pFET and nFET gates; and forming a metal silicide over a first raised source/drain on the p-side and over a second raised source/drain on the n-side, wherein the metal silicide extends from the first raised source/drain to the second raised source/drain and below the gate contact between the pFET and nFET gates."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Pass-through contact using silicide","description":"A method of forming a silicide layer as a pass-through contact under a gate contact between p-epilayer and n-epilayer source/drains and the resulting device are provided. Embodiments include depositin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666488","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666488","citation_suggestion":"Patentable. \"Pass-through contact using silicide\" (US-9666488). https://patentable.app/patents/US-9666488","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666488","json":"https://patentable.app/api/llm-context/US-9666488","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:33:51.481Z"}