{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666580","patent":{"patent_number":"US-9666580","title":"Nitride semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-10-12T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A nitride semiconductor device includes a conductive substrate and a nitride semiconductor layer. The nitride semiconductor layer is disposed on the conductive substrate. The nitride semiconductor layer includes a first transistor structure of a lateral type and a second transistor structure of a lateral type. The conductive substrate includes a first potential control region and a second potential control region capable of controlling potential independently from the first potential control region. In planar view of the nitride semiconductor layer, the first transistor structure overlaps the first potential control region and the second transistor structure overlaps the second potential control region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor device and method of manufacturing the same","description":"A nitride semiconductor device includes a conductive substrate and a nitride semiconductor layer. The nitride semiconductor layer is disposed on the conductive substrate. The nitride semiconductor lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666580","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666580","citation_suggestion":"Patentable. \"Nitride semiconductor device and method of manufacturing the same\" (US-9666580). https://patentable.app/patents/US-9666580","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666580","json":"https://patentable.app/api/llm-context/US-9666580","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:20:55.581Z"}