{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666581","patent":{"patent_number":"US-9666581","title":"FinFET with source/drain structure and method of fabrication thereof","assignee":null,"inventors":[],"filing_date":"2015-08-21T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"A method of semiconductor fabrication that includes providing a plurality of fins extending from a substrate is described. Each of the plurality of fins has a top surface and two opposing lateral sidewalls. A gate structure is formed over a first region of each of the plurality of fins and interfaces the top surface and the two opposing lateral sidewalls. A source/drain epitaxial feature is formed on a second region of each of the plurality of fins. The source/drain epitaxial feature interfaces the top surface and the two opposing lateral sidewalls. An air gap is provided which is defined by at least one surface of the source/drain epitaxial feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET with source/drain structure and method of fabrication thereof","description":"A method of semiconductor fabrication that includes providing a plurality of fins extending from a substrate is described. Each of the plurality of fins has a top surface and two opposing lateral side","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666581","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666581","citation_suggestion":"Patentable. \"FinFET with source/drain structure and method of fabrication thereof\" (US-9666581). https://patentable.app/patents/US-9666581","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666581","json":"https://patentable.app/api/llm-context/US-9666581","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:33:52.337Z"}