{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666584","patent":{"patent_number":"US-9666584","title":"Method of manufacturing semiconductor integrated circuit device","assignee":null,"inventors":[],"filing_date":"2016-07-22T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":4,"abstract":"Using an STI insulating film in a high breakdown voltage MOSFET leads to deterioration in reliability due to impact ionization near the bottom corner of a drain isolation insulating film.The invention provides a method of manufacturing a semiconductor integrated circuit device including forming a hard mask film, an opening therein, and a sidewall insulating film on the side surface thereof; forming a shallow trench in the opening with the hard mask film as a mask and oxidizing at least an exposed portion; filling the trench with an insulating film and then removing it so as to leave it outside the trench in the opening and thereby forming a drain offset STI insulating film inside and outside the trench; and forming a gate electrode extending from the upper portion of a gate insulating film in an active region contiguous thereto to the upper portion of the drain offset insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor integrated circuit device","description":"Using an STI insulating film in a high breakdown voltage MOSFET leads to deterioration in reliability due to impact ionization near the bottom corner of a drain isolation insulating film.The invention","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666584","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666584","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor integrated circuit device\" (US-9666584). https://patentable.app/patents/US-9666584","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666584","json":"https://patentable.app/api/llm-context/US-9666584","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:34:59.104Z"}