{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666586","patent":{"patent_number":"US-9666586","title":"CMOS compatible memory cells","assignee":null,"inventors":[],"filing_date":"2014-08-14T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["G11C","H01L"],"num_claims":10,"abstract":"A memory cell and a process for production thereof, the memory cell having a CMOS substrate having two adjacent wells of opposite conductivity types, having trench isolation between the wells, wherein one of the wells is connected to a ground voltage level and the other one to a constant voltage level; a shallow lightly doped n layer in a first one of the wells; a shallow lightly doped p layer in a second one of the wells; at least a first and second deep heavily doped p regions in the first well; at least a first and second deep heavily doped n regions in the second well; and a conductor to connect the first and second deep p regions, the shallow n region, the first and second deep n regions and the shallow p region to the same input voltage level relative to the ground voltage level."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"CMOS compatible memory cells","description":"A memory cell and a process for production thereof, the memory cell having a CMOS substrate having two adjacent wells of opposite conductivity types, having trench isolation between the wells, wherein","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666586","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666586","citation_suggestion":"Patentable. \"CMOS compatible memory cells\" (US-9666586). https://patentable.app/patents/US-9666586","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666586","json":"https://patentable.app/api/llm-context/US-9666586","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:41:38.781Z"}