{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666589","patent":{"patent_number":"US-9666589","title":"FinFET based flash memory cell","assignee":null,"inventors":[],"filing_date":"2016-03-21T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":11,"abstract":"A method of manufacturing a semiconductor device is provided including providing a semiconductor substrate, forming a first plurality of semiconductor fins in a logic area of the semiconductor substrate, forming a second plurality of semiconductor fins in a memory area of the semiconductor substrate, forming an insulating layer between the fins of the first plurality of semiconductor fins and between the fins of the second plurality of semiconductor fins, forming an electrode layer over the first and second pluralities of semiconductor fins and the insulating layer, forming gates over semiconductor fins of the first plurality of semiconductor fins in the logic area from the gate electrode layer, and forming sense gates and control gates between semiconductor fins of the second plurality of semiconductor fins in the logic area from the gate electrode layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET based flash memory cell","description":"A method of manufacturing a semiconductor device is provided including providing a semiconductor substrate, forming a first plurality of semiconductor fins in a logic area of the semiconductor substra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666589","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666589","citation_suggestion":"Patentable. \"FinFET based flash memory cell\" (US-9666589). https://patentable.app/patents/US-9666589","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666589","json":"https://patentable.app/api/llm-context/US-9666589","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:05:00.622Z"}