{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666640","patent":{"patent_number":"US-9666640","title":"High thermal budget magnetic memory","assignee":null,"inventors":[],"filing_date":"2016-03-15T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"Semiconductor devices and methods for forming a semiconductor device are disclosed. The method includes forming a storage unit of a magnetic memory cell. A bottom electrode and a fixed layer are formed. The fixed layer includes a composite spacer layer disposed on the bottom electrode. The composite spacer layer includes a base layer and an amorphous buffer layer disposed over the base layer. A reference layer is disposed on the composite spacer layer. The amorphous buffer layer serves as a template for the reference layer to have a desired crystalline structure in a desired orientation. At least one tunneling barrier layer is formed over the fixed layer. A storage layer is formed over the tunneling barrier layer and a top electrode is formed over the storage layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High thermal budget magnetic memory","description":"Semiconductor devices and methods for forming a semiconductor device are disclosed. The method includes forming a storage unit of a magnetic memory cell. A bottom electrode and a fixed layer are forme","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666640","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666640","citation_suggestion":"Patentable. \"High thermal budget magnetic memory\" (US-9666640). https://patentable.app/patents/US-9666640","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666640","json":"https://patentable.app/api/llm-context/US-9666640","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:44:35.681Z"}