{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666670","patent":{"patent_number":"US-9666670","title":"Method and structure of making enhanced UTBB FDSOI devices","assignee":null,"inventors":[],"filing_date":"2016-05-31T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material. An extended channel region of a transistor is positioned in the second layer of semiconductor material, interacting with a top surface, side surfaces, and potentially portions of a bottom surface of the second layer of semiconductor material. A gate dielectric is positioned on a top surface and on the exposed side surface of the second layer of semiconductor material. A gate electrode is positioned on the top surface and the exposed side surface of the second layer of semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and structure of making enhanced UTBB FDSOI devices","description":"An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666670","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666670","citation_suggestion":"Patentable. \"Method and structure of making enhanced UTBB FDSOI devices\" (US-9666670). https://patentable.app/patents/US-9666670","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666670","json":"https://patentable.app/api/llm-context/US-9666670","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:40:45.891Z"}