{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666672","patent":{"patent_number":"US-9666672","title":"FinFET device","assignee":null,"inventors":[],"filing_date":"2016-05-09T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A device includes a first fin including a first semiconductor material. A first dielectric layer is disposed over a top surface of the first fin. A sidewall of the first dielectric layer has a dip-shape profile. A second dielectric layer is disposed along sidewalls of the first fin. A top surface of the second dielectric layer is substantially coplanar with the top surface of the first fin. A second fin includes a second semiconductor material different from the first semiconductor material. An isolation region is disposed between the first fin and the second fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET device","description":"A device includes a first fin including a first semiconductor material. A first dielectric layer is disposed over a top surface of the first fin. A sidewall of the first dielectric layer has a dip-sha","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666672","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666672","citation_suggestion":"Patentable. \"FinFET device\" (US-9666672). https://patentable.app/patents/US-9666672","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666672","json":"https://patentable.app/api/llm-context/US-9666672","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:50:30.221Z"}