{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666676","patent":{"patent_number":"US-9666676","title":"Method for manufacturing a semiconductor device by exposing, to a hydrogen plasma atmosphere, a semiconductor substrate","assignee":null,"inventors":[],"filing_date":"2015-10-13T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device having a MOS gate structure includes forming a device structure on a semiconductor substrate; forming an interlayer dielectric to cover the device structure; forming a contact hole through the interlayer dielectric; forming a transition metal film (e.g., Ni) on a portion of the semiconductor substrate exposed by the contact hole; (e) forming a metal film (e.g., Ti) on the entire surface of the semiconductor substrate; forming an oxide film in the surface of the metal film; selectively removing the metal film in which the oxide film has been formed, to thereby expose the transition metal film; and (h) exposing, to a hydrogen plasma atmosphere, the semiconductor substrate in which the transition metal film and the oxide film have been exposed, to thereby cause the transition metal film to generate heat and react with the semiconductor substrate and form an ohmic contact there between."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor device by exposing, to a hydrogen plasma atmosphere, a semiconductor substrate","description":"A method for manufacturing a semiconductor device having a MOS gate structure includes forming a device structure on a semiconductor substrate; forming an interlayer dielectric to cover the device str","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666676","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666676","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor device by exposing, to a hydrogen plasma atmosphere, a semiconductor substrate\" (US-9666676). https://patentable.app/patents/US-9666676","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666676","json":"https://patentable.app/api/llm-context/US-9666676","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:32:44.158Z"}