{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666683","patent":{"patent_number":"US-9666683","title":"Surface treatment and passivation for high electron mobility transistors","assignee":null,"inventors":[],"filing_date":"2015-10-09T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A High Electron Mobility Transistor (HEMT) and a method of forming the same are disclosed. The method includes epitaxially growing a first III-V compound layer and epitaxially growing a second III-V compound layer over the first III-V compound layer, wherein a first native oxide layer is formed on the second III-V compound layer. The method further includes in-situ treating the first native oxide layer with a first gas, thereby converting the first native oxide layer into a first crystalline oxide layer. The method further includes forming a first crystalline interfacial layer over the first crystalline oxide layer and forming a dielectric passivation layer over the first crystalline interfacial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Surface treatment and passivation for high electron mobility transistors","description":"A High Electron Mobility Transistor (HEMT) and a method of forming the same are disclosed. The method includes epitaxially growing a first III-V compound layer and epitaxially growing a second III-V c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666683","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666683","citation_suggestion":"Patentable. \"Surface treatment and passivation for high electron mobility transistors\" (US-9666683). https://patentable.app/patents/US-9666683","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666683","json":"https://patentable.app/api/llm-context/US-9666683","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:50:27.644Z"}