{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666699","patent":{"patent_number":"US-9666699","title":"Semiconductor device having field plate disposed on isolation feature and method for forming the same","assignee":null,"inventors":[],"filing_date":"2016-03-30T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":26,"abstract":"The invention provides a semiconductor device, including a buried oxide layer disposed on a substrate. A semiconductor layer is disposed on the buried oxide layer. A first well is disposed in the semiconductor layer. A second well and a third well are disposed to opposite sides of the first well and separated from the first well. An isolation feature covers the first well and the third well. A poly field plate is disposed on the isolation feature and over the semiconductor layer between the first well and the third well. A first anode doped region is disposed on the second well. A second anode doped region and a third anode doped region are disposed on the second well. The second anode doped region is positioned directly on the third anode doped region. A first cathode doped region is coupled to the third well."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having field plate disposed on isolation feature and method for forming the same","description":"The invention provides a semiconductor device, including a buried oxide layer disposed on a substrate. A semiconductor layer is disposed on the buried oxide layer. A first well is disposed in the semi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666699","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666699","citation_suggestion":"Patentable. \"Semiconductor device having field plate disposed on isolation feature and method for forming the same\" (US-9666699). https://patentable.app/patents/US-9666699","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666699","json":"https://patentable.app/api/llm-context/US-9666699","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:34:50.726Z"}