{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9666708","patent":{"patent_number":"US-9666708","title":"III-N transistors with enhanced breakdown voltage","assignee":null,"inventors":[],"filing_date":"2014-03-26T00:00:00.000Z","publication_date":"2017-05-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":24,"abstract":"Techniques related to III-N transistors having enhanced breakdown voltage, systems incorporating such transistors, and methods for forming them are discussed. Such transistors include a hardmask having an opening over a substrate, a source, a drain, and a channel between the source and drain, and a portion of the source or the drain disposed over the opening of the hardmask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"III-N transistors with enhanced breakdown voltage","description":"Techniques related to III-N transistors having enhanced breakdown voltage, systems incorporating such transistors, and methods for forming them are discussed. Such transistors include a hardmask havin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9666708","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9666708","citation_suggestion":"Patentable. \"III-N transistors with enhanced breakdown voltage\" (US-9666708). https://patentable.app/patents/US-9666708","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9666708","json":"https://patentable.app/api/llm-context/US-9666708","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:03:56.895Z"}