{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9670591","patent":{"patent_number":"US-9670591","title":"Defect reduction in seeded aluminum nitride crystal growth","assignee":null,"inventors":[],"filing_date":"2014-08-13T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":38,"abstract":"Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Defect reduction in seeded aluminum nitride crystal growth","description":"Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9670591","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9670591","citation_suggestion":"Patentable. \"Defect reduction in seeded aluminum nitride crystal growth\" (US-9670591). https://patentable.app/patents/US-9670591","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9670591","json":"https://patentable.app/api/llm-context/US-9670591","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:59:56.328Z"}