{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9672911","patent":{"patent_number":"US-9672911","title":"Static random access memory (SRAM) with programmable resistive elements","assignee":null,"inventors":[],"filing_date":"2015-08-25T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A memory device includes a volatile memory cell and a non-volatile memory cell. The non-volatile memory cell includes a first resistive element having a first terminal and a second terminal and a second resistive element having a first terminal and a second terminal. The first terminal of the first resistive element is coupled to the first terminal of the second resistive element at a first node. The second terminal of the first resistive element is coupled to a first source line voltage. The second terminal of the second resistive element is coupled to a second source line voltage. A first transistor includes a first current electrode coupled to a first data storage node of the volatile memory cell, a second current electrode coupled to a supply voltage, and a control gate coupled to the first node."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Static random access memory (SRAM) with programmable resistive elements","description":"A memory device includes a volatile memory cell and a non-volatile memory cell. The non-volatile memory cell includes a first resistive element having a first terminal and a second terminal and a seco","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9672911","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9672911","citation_suggestion":"Patentable. \"Static random access memory (SRAM) with programmable resistive elements\" (US-9672911). https://patentable.app/patents/US-9672911","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9672911","json":"https://patentable.app/api/llm-context/US-9672911","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:42:57.166Z"}