{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9672929","patent":{"patent_number":"US-9672929","title":"Semiconductor memory in which source line voltage is applied during a read operation","assignee":null,"inventors":[],"filing_date":"2016-06-06T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A semiconductor memory device includes a memory cell, a word line electrically connected to a gate of the memory cell, and a source line electrically connected to a first end of the memory cell. During a read operation of the memory cell, a first voltage is applied to the source line in a first operation to determine whether or not a threshold voltage of the memory cell is above a first threshold value, a second voltage is applied to the source line in a second operation to determine whether or not the threshold voltage of the memory cell is above a second threshold value, and a third voltage is applied to the source line in a third operation to determine whether or not the threshold voltage of the memory cell is above a third threshold value."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory in which source line voltage is applied during a read operation","description":"A semiconductor memory device includes a memory cell, a word line electrically connected to a gate of the memory cell, and a source line electrically connected to a first end of the memory cell. Durin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9672929","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9672929","citation_suggestion":"Patentable. \"Semiconductor memory in which source line voltage is applied during a read operation\" (US-9672929). https://patentable.app/patents/US-9672929","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9672929","json":"https://patentable.app/api/llm-context/US-9672929","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:22:42.477Z"}