{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673059","patent":{"patent_number":"US-9673059","title":"Method for increasing pattern density in self-aligned patterning integration schemes","assignee":null,"inventors":[],"filing_date":"2016-01-28T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Provided is a method for increasing pattern density of a structure on a substrate using an integration scheme comprising: providing a substrate having a patterned layer comprising a first mandrel and an underlying layer; performing a first conformal spacer deposition creating a first conformal layer; performing a first spacer reactive ion etch (RIE) process on the first conformal layer, creating a first spacer pattern; performing a first mandrel pull process removing the first mandrel; performing a second conformal spacer deposition creating a second conformal layer; performing a second RIE process creating a second spacer pattern, the first spacer pattern acting as a second mandrel; performing a second mandrel pull process removing the first spacer pattern; and transferring the second spacer pattern into the underlying layer; where the integration targets include patterning uniformity, pulldown of structures, slimming of structures, and gouging of the underlying layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for increasing pattern density in self-aligned patterning integration schemes","description":"Provided is a method for increasing pattern density of a structure on a substrate using an integration scheme comprising: providing a substrate having a patterned layer comprising a first mandrel and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673059","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673059","citation_suggestion":"Patentable. \"Method for increasing pattern density in self-aligned patterning integration schemes\" (US-9673059). https://patentable.app/patents/US-9673059","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673059","json":"https://patentable.app/api/llm-context/US-9673059","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:36:39.596Z"}