{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673083","patent":{"patent_number":"US-9673083","title":"Methods of forming fin isolation regions on FinFET semiconductor devices by implantation of an oxidation-retarding material","assignee":null,"inventors":[],"filing_date":"2015-01-29T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate, the fin having a lower first section that contains an oxidation-retarding implant region and an upper second section that is substantially free of the oxidation-retarding implant region, forming a sidewall spacer on opposite sides of the upper portion of the fin, forming a first layer of insulating material adjacent the sidewall spacers and the upper second section of the lower portion of the fin, and, with the first layer of insulating material in position, performing a thermal anneal process to convert the portion of the upper second section of the fin that is in contact with the first layer of insulating material into an oxide fin isolation region positioned under the fin above the lower first section of the fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming fin isolation regions on FinFET semiconductor devices by implantation of an oxidation-retarding material","description":"One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate, the fin having a lower first section that contains an oxidation-retarding implant reg","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673083","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673083","citation_suggestion":"Patentable. \"Methods of forming fin isolation regions on FinFET semiconductor devices by implantation of an oxidation-retarding material\" (US-9673083). https://patentable.app/patents/US-9673083","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673083","json":"https://patentable.app/api/llm-context/US-9673083","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:33:55.917Z"}