{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673094","patent":{"patent_number":"US-9673094","title":"Semiconductor device having via hole coated in side surfaces with heat treated nitride metal and method to form the same","assignee":null,"inventors":[],"filing_date":"2015-12-21T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A semiconductor device having a via hole whose side surface is covered with nitride metal is disclosed. The via hole is formed within an insulating region that surrounds a conductive region, where both regions are made of nitride semiconductor materials. The via hole is filled with a back metal and in side surfaces thereof is covered with the nitride metal which is heat treated at a preset temperature for a preset period. Nitrogen atoms in the nitride metal diffuse into the nitride semiconductor materials in the insulating regions and compensate nitride vacancies therein. The interface between the nitride metal and the nitride semiconductor material is converted into an altered region that shows enough resistivity to suppress currents leaking from the via hole metal to the conductive region of the nitride semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having via hole coated in side surfaces with heat treated nitride metal and method to form the same","description":"A semiconductor device having a via hole whose side surface is covered with nitride metal is disclosed. The via hole is formed within an insulating region that surrounds a conductive region, where bot","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673094","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673094","citation_suggestion":"Patentable. \"Semiconductor device having via hole coated in side surfaces with heat treated nitride metal and method to form the same\" (US-9673094). https://patentable.app/patents/US-9673094","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673094","json":"https://patentable.app/api/llm-context/US-9673094","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:39:49.875Z"}