{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673100","patent":{"patent_number":"US-9673100","title":"Semiconductor device having contact plug in two dielectric layers and two etch stop layers","assignee":null,"inventors":[],"filing_date":"2014-11-10T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a plurality of gate structures on the substrate; forming a first stop layer on the gate structures; forming a second stop layer on the first stop layer; forming a first dielectric layer on the second stop layer; forming a plurality of first openings in the first dielectric layer to expose the second stop layer; forming a plurality of second openings in the first dielectric layer and the second stop layer to expose the first stop layer; and removing part of the second stop layer and part of the first stop layer to expose the gate structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having contact plug in two dielectric layers and two etch stop layers","description":"A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a plurality of gate structures on the substrate; forming a first stop layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673100","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673100","citation_suggestion":"Patentable. \"Semiconductor device having contact plug in two dielectric layers and two etch stop layers\" (US-9673100). https://patentable.app/patents/US-9673100","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673100","json":"https://patentable.app/api/llm-context/US-9673100","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:49:50.697Z"}