{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673163","patent":{"patent_number":"US-9673163","title":"Semiconductor device with flip chip structure and fabrication method of the semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-10-18T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"The semiconductor device having flip chip structure includes: an insulating substrate; a signal wiring electrode disposed on the insulating substrate; a power wiring electrode disposed on the insulating substrate or disposed so as to pass through the insulating substrate; a semiconductor chip disposed in flip chip configuration on the insulating substrate and comprising a semiconductor substrate, a source pad electrode and a gate pad electrode disposed on a surface of the semiconductor substrate, and a drain pad electrode disposed on a back side surface of the semiconductor substrate; agate connector disposed on the gate pad electrode; and a source connector disposed on the source pad electrode. The gate connector, the gate pad electrode and the signal wiring electrode are bonded, and the source connector, the source pad electrode and the power wiring electrode are bonded, by using solid phase diffusion bonding."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with flip chip structure and fabrication method of the semiconductor device","description":"The semiconductor device having flip chip structure includes: an insulating substrate; a signal wiring electrode disposed on the insulating substrate; a power wiring electrode disposed on the insulati","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673163","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673163","citation_suggestion":"Patentable. \"Semiconductor device with flip chip structure and fabrication method of the semiconductor device\" (US-9673163). https://patentable.app/patents/US-9673163","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673163","json":"https://patentable.app/api/llm-context/US-9673163","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:20:22.914Z"}