{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9673202","patent":{"patent_number":"US-9673202","title":"Structure and method for FinFET SRAM","assignee":null,"inventors":[],"filing_date":"2016-01-08T00:00:00.000Z","publication_date":"2017-06-06T00:00:00.000Z","cpc_codes":["G06F","H01L","H01L"],"num_claims":20,"abstract":"Provided is an embedded FinFET SRAM structure and methods of making the same. The embedded FinFET SRAM structure includes an array of SRAM cells. The SRAM cells have a first pitch in a first direction and a second pitch in a second direction orthogonal to the first direction. The first and second pitches are configured so as to align fin active lines and gate features of the SRAM cells with those of peripheral logic circuits. A layout of the SRAM structure includes three layers, wherein a first layer defines mandrel patterns for forming fins, a second layer defines a first cut pattern for removing dummy fins, and a third layer defines a second cut pattern for shortening fin ends. The three layers collectively define fin active lines of the SRAM structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method for FinFET SRAM","description":"Provided is an embedded FinFET SRAM structure and methods of making the same. The embedded FinFET SRAM structure includes an array of SRAM cells. The SRAM cells have a first pitch in a first direction","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9673202","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9673202","citation_suggestion":"Patentable. \"Structure and method for FinFET SRAM\" (US-9673202). https://patentable.app/patents/US-9673202","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9673202","json":"https://patentable.app/api/llm-context/US-9673202","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:00:12.186Z"}